Scientists build double-floating-gate FET, believe it could revolutionize computer memory

Look, we get it, you want DRAM that behaves like flash, flash that behaves like DRAM, and everything in between — speedy computer memory that doesn’t lose its data when the power goes off, and lasts for years on end. Well, it looks there’s a new challenger about to enter that ring — double floating-gate field effect transistors, currently in prototype form at North Carolina State University. Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs , the second floating gate lets bits of data stay in an active, ready state, but the computer can also apply a higher voltage to “freeze” them in place. Since the memory can switch between static and dynamic modes in a single cycle and the data never disappears in between, researchers imagine the new tech could lead to instant-on computers and power-saving techniques that shut down idle memory banks. That’s the consumer take, at least — find the technical deep dive at our more coverage link. Scientists build double-floating-gate FET, believe it could revolutionize computer memory originally appeared on Engadget on Sun, 23 Jan 2011 13:20:00 EDT. Please see our terms for use of feeds . Permalink

Posted by on January 23, 2011. Filed under News, Tech. You can follow any responses to this entry through the RSS 2.0. You can leave a response or trackback to this entry